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new product VS-APH3006-F3, vs-aph3006-n3, vs-eph3006-f3, vs-eph3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 1 document number: 93571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 30 a fred pt ? features ? low forward voltage drop ? hyperfast soft recovery time ? 175 c operating junction temperature ? designed and qualified according to jedec-jesd47 ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 description/applications hyperfast recovery rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. the planar structure and the pl atinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, in verters or as freewheeling diodes. the extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-247ac, to-247ac modified (2 pins) i f(av) 30 a v r 600 v v f at i f 2.65 v t rr typ. 27 ns t j max. 175 c diode variation single die to-247ac modi?ed to-247ac v s -aph 3 006-f 3 v s -eph 3 006-f 3 v s -aph 3 006-n 3 v s -eph 3 006-n 3 2 13 cathode anode anode 1 3 anode 4, 2 absolute maximum ratings parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 112 c 30 a non-repetitive peak surge current i fsm t c = 25 c 220 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 2.0 2.65 i f = 30 a, t j = 150 c - 1.4 1.8 reverse leakage current i r v r = v r rated - - 30 a t j = 150 c, v r = v r rated - - 300 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
new product VS-APH3006-F3, vs-aph3006-n3, vs-eph3006-f3, vs-eph3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 2 document number: 93571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 26 35 ns t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -26- t j = 125 c - 70 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7.6 - reverse recovery charge q rr t j = 25 c - 50 - nc t j = 125 c - 280 - thermal - mechanical specifications parameter symbol test condit ions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc -0.71.1c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -5.5- g -0.2-oz. mounting torque 1.2 (10) - 2.4 (20) kgf cm (lbf in) marking device case style to-247ac aph3006 case style to-247a c modified eph3006
new product VS-APH3006-F3, vs-aph3006-n3, vs-eph3006-f3, vs-eph3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 3 document number: 93571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junc tion capacitance vs. reverse voltage fig. 4 - max. thermal impedance z thjc characteristics forward voltage drop - v fm (v) in s tantaneou s forward current - i f (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 1000 t j = 25 c t j = 150 c t j = 175 c 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 100 1000 150 c 175 c 25 c 50 c 75 c 125 c 100 c rever s e current - i r (a) rever s e voltage - v r (v) rever s e voltage - v r (v) junction capacitance - c t (pf) 0 100 200 300 400 500 600 1 10 100 1000 t1, rectangular pul s e duration ( s ) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 s ingle pul s e (thermal re s i s tance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01
new product VS-APH3006-F3, vs-aph3006-n3, vs-eph3006-f3, vs-eph3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 4 document number: 93571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery vs. di f /dt fig. 8 - typical stored charge vs. di f /dt average forward current - i f(av) (a) allowable ca s e temperature (c) 0 10 20 30 40 50 80 90 100 110 120 130 140 150 160 170 180 dc average forward current - i f(av) (a) average power lo ss (w) 0 5 10 15 20 25 30 35 40 45 0 20 40 60 80 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rm s limit t rr (n s ) i f = 30 a, 125 c i f = 30 a, 25 c typical value di f /dt (a/ s ) 10 20 30 40 50 60 70 80 90 100 1000 t rr (nc) i f = 30 a, 125 c i f = 30 a, 25 c typical value di f /dt (a/ s ) 10 0 200 300 400 500 600 700 800 900 100 1000
new product VS-APH3006-F3, vs-aph3006-n3, vs-eph3006-f3, vs-eph3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 5 document number: 93571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
new product VS-APH3006-F3, vs-aph3006-n3, vs-eph3006-f3, vs-eph3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 6 document number: 93571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description VS-APH3006-F3 25 500 antistatic plastic tube vs-aph3006-n3 25 500 antistatic plastic tube vs-eph3006-f3 25 500 antistatic plastic tube vs-eph3006-n3 25 500 antistatic plastic tube links to related documents dimensions to-247ac www.vishay.com/doc?95223 to-247ac modified www.vishay.com/doc?95253 part marking information to-247ac www.vishay.com/doc?95007 to-247ac modified www.vishay.com/doc?95442 2 - ultrafast mur series ? a = single diode ? e = single diode (modified) 1 - vishay semiconductors product 3 - p = to-247ac 4 - h = hyperfast recovery time 5 - current code (30 = 30 a) 6 - voltage code (06 = 600 v) 7 device code 5 1 3 2 4 6 vs- e p h 30 06 -f3 7 - environmental digit: -f3 = rohs compliant and totally lead (pb)-free -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
part marking information www.vishay.com vishay semiconductors revision: 09-aug-11 1 document number: 95442 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247ac modified e note (1) if part number contain h as last digit, product is aec-q101 qualified environmental naming code (z) product definition a termination lead (pb)-free btotally lead (pb)-free e rohs compliant and termination lead (pb)-free f rohs compliant and to tally lead (pb)-free m halogen-free, rohs compliant and termination lead (pb)-free n halogen-free, rohs compliant and totally lead (pb)-free ggreen assembly lot code product version (optional): z (replaced according below table) date code: year 1 = 2011 week 19 line x part number example: this is a xxxxxxx (1) with assembly lot code ac, assembled on ww 19, 2011 in the assembly line ?x? xxxxxxx (1) v z119x a c
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